 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII II I I III I I II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII III I I I II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII III I I I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II II II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII II III I II IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIII II III I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIII I I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves ("-1" Suffix) Lead Formed Version Available in 16 mm Tape and Reel ("T4" Suffix) Surface Mount Replacements for 2N6040-2N6045 Series, TIP120-TIP122 Series, and TIP125-TIP127 Series * Monolithic Construction With Built-in Base-Emitter Shunt Resistors * High DC Current Gain -- hFE = 2500 (Typ) @ IC = 4.0 Adc * Complementary Pairs Simplifies Designs * * * * * These ratings are applicable when surface mounted on the minimum pad sizes recommended. (continued) OFF CHARACTERISTICS (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data Preferred devices are Motorola recommended choices for future use and best overall value. DPAK For Surface Mount Applications Complementary Darlington Power Transistors SEMICONDUCTOR TECHNICAL DATA MOTOROLA ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) THERMAL CHARACTERISTICS MAXIMUM RATINGS REV 1 Collector Cutoff Current (VCE = 50 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (IC = 30 mAdc, IB = 0) Thermal Resistance, Junction to Ambient* Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Total Power Dissipation* @ TA = 25_C Derate above 25_C Total Power Dissipation @ TC = 25_C Derate above 25_C Base Current Collector Current -- Continuous Peak Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Designed for general purpose amplifier and low speed switching applications. Characteristic Characteristic Rating VCEO(sus) Symbol Symbol Symbol TJ, Tstg VCEO RJC ICEO RJA VCB VEB PD PD IC IB Min 100 - 65 to + 150 -- MJD122 MJD127 1.75 0.014 71.4 6.25 Max 20 0.16 120 100 100 8 16 5 Max 10 -- mAdc Watts W/_C Watts W/_C _C/W _C/W Adc Unit Unit Unit Adc Vdc Vdc Vdc Vdc _C SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATTS MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS MJD122* PNP MJD127* *Motorola Preferred Device CASE 369A-13 CASE 369-07 Order this document by MJD122/D NPN inches mm 1 0.243 6.172 0.063 1.6 0.118 3.0 0.07 1.8 0.165 4.191 0.190 4.826 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII I IIII I II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I II I I IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MJD122 MJD127 (1) Pulse Test: Pulse Width DYNAMIC CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS -- continued ELECTRICAL CHARACTERISTICS -- continued (TC = 25_C unless otherwise noted) Small-Signal Current Gain (IC = 3 Adc, VCE = 4 Vdc, f = 1 kHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Current-Gain-Bandwidth Product (IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz) Base-Emitter On Voltage (IC = 4 Adc, VCE = 4 Vdc) Base-Emitter Saturation Voltage (1) (IC = 8 Adc, IB = 80 mAdc) Collector-Emitter Saturation Voltage (IC = 4 Adc, IB = 16 mAdc) (IC = 8 Adc, IB = 80 mAdc) DC Current Gain (IC = 4 Adc, VCE = 4 Vdc) (IC = 8 Adc, VCE = 4 Vdc) Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) Collector Cutoff Current (VCE = 100 Vdc, VBE(off) = 1.5 Vdc) (VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) 2 Characteristic v 300 s, Duty Cycle v 2%. PD, POWER DISSIPATION (WATTS) 0.5 1.5 15 TA TC 2.5 25 0 1 10 2 20 0 5 25 50 TA SURFACE MOUNT Figure 1. Power Derating MJD127 MJD122 TC 75 100 T, TEMPERATURE (C) VCE(sat) VBE(sat) VBE(on) Symbol ICBO IEBO ICEX |hfe| Cob hFE hfe Motorola Bipolar Power Transistor Device Data 125 1000 100 Min 300 -- -- -- -- -- -- -- -- -- -- 4 150 12,000 -- Max 10 500 300 200 2.8 4.5 10 -- 2 4 2 -- mAdc Adc Adc MHz Unit Vdc Vdc Vdc pF -- -- MJD122 MJD127 TYPICAL ELECTRICAL CHARACTERISTICS PNP MJD127 20,000 VCE = 4 V hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 10,000 7000 5000 3000 2000 25C 1000 700 500 300 200 0.1 - 55C 10,000 5000 3000 2000 25C 1000 500 300 200 0.1 - 55C TJ = 150C 20,000 VCE = 4 V NPN MJD122 TJ = 150C 0.2 0.3 0.5 0.7 1 2 3 5 7 10 0.2 0.3 0.5 0.7 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 2. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 25C 2.6 IC = 2 A 4A 6A VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 3 3 TJ = 25C 2.6 IC = 2 A 4A 6A 2.2 2.2 1.8 1.8 1.4 1 0.3 1.4 1 0.3 0.5 0.7 1 2 3 5 7 10 20 30 0.5 0.7 1 2 3 5 7 10 20 30 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA) Figure 3. Collector Saturation Region 3 TJ = 25C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 3 TJ = 25C 2.5 2 2 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4 V 1 VCE(sat) @ IC/IB = 250 0.5 0.1 1.5 VBE @ VCE = 4 V VBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 1.5 1 0.5 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 0.2 0.3 0.5 0.7 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 4. "On" Voltages Motorola Bipolar Power Transistor Device Data 3 MJD122 MJD127 TYPICAL ELECTRICAL CHARACTERISTICS PNP MJD127 V, TEMPERATURE COEFFICIENTS (mV/C) *IC/IB hFE/3 V, TEMPERATURE COEFFICIENTS (mV/C) +5 +4 +3 +2 +1 0 -1 -2 -3 -4 -5 0.1 0.2 0.3 1 23 0.5 IC, COLLECTOR CURRENT (AMP) 5 7 10 VB for VBE VC for VCE(sat) - 55C to 25C 25C to 150C 25C to 150C +5 +4 +3 +2 +1 0 -1 -2 -3 -4 VB for VBE 25C to 150C - 55C to 25C 5 7 10 *VC for VCE(sat) - 55C to 25C *IC/IB hFE/3 25C to 150C NPN MJD122 - 55C to 25C -5 0.1 0.2 0.3 0.5 0.7 1 23 IC, COLLECTOR CURRENT (AMP) Figure 5. Temperature Coefficients 105 REVERSE IC, COLLECTOR CURRENT ( A) 104 103 102 101 100 TJ = 150C 100C 25C - 1.2 - 1.4 VCE = 30 V FORWARD IC, COLLECTOR CURRENT ( A) 105 REVERSE 104 103 102 TJ = 150C 101 100 100C VCE = 30 V FORWARD 10-1 0 - 0.2 - 0.4 - 0.6 - 0.8 - 1 + 0.6 + 0.4 + 0.2 VBE, BASE-EMITTER VOLTAGE (VOLTS) 25C 10-1 - 0.6 - 0.4 - 0.2 0 + 0.2 + 0.4 + 0.6 + 0.8 + 1 VBE, BASE-EMITTER VOLTAGE (VOLTS) + 1.2 + 1.4 Figure 6. Collector Cut-Off Region 10,000 hfe , SMALL-SIGNAL CURRENT GAIN 5000 3000 2000 1000 500 300 200 100 50 30 20 10 1 2 5 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 PNP NPN TC = 25C VCE = 4 Vdc IC = 3 Adc C, CAPACITANCE (pF) 300 TJ = 25C 200 Cob 100 70 Cib 50 PNP NPN 0.2 0.5 1 2 5 10 20 50 100 30 0.1 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Small-Signal Current Gain Figure 8. Capacitance 4 Motorola Bipolar Power Transistor Device Data MJD122 MJD127 5 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA TUT V2 APPROX +8 V 0 V1 APPROX -12 V tr, tf 10 ns DUTY CYCLE = 1% RB 51 D1 +4V 8 k 120 VCC - 30 V RC SCOPE t, TIME ( s) 3 2 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.1 ts PNP NPN tf 25 s FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES. VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C 0.2 tr td @ VBE(off) = 0 V 5 7 10 0.3 0.5 0.7 1 3 2 IC, COLLECTOR CURRENT (AMP) Figure 9. Switching Times Test Circuit Figure 10. Switching Times r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 D = 0.5 0.2 0.1 0.05 0.01 SINGLE PULSE RJC(t) = r(t) RJC RJC = 6.25C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 300 500 1000 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 t, TIME OR PULSE WIDTH (ms) 20 30 Figure 11. Thermal Response IC, COLLECTOR CURRENT (AMP) 20 15 10 5 3 2 1 0.5 0.3 0.2 0.1 0.05 0.03 0.02 TJ = 150C 1 ms 500 s 100 s 5 ms BONDING WIRE LIMIT THERMAL LIMIT TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 1 2 3 5 7 10 20 30 dc There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 12 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150_C. T J(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 70 100 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 12. Maximum Forward Bias Safe Operating rea Motorola Bipolar Power Transistor Device Data 5 MJD122 MJD127 PNP COLLECTOR NPN COLLECTOR BASE BASE 8k 120 8k 120 EMITTER EMITTER Figure 13. Darlington Schematic 6 Motorola Bipolar Power Transistor Device Data MJD122 MJD127 PACKAGE DIMENSIONS -T- B V R 4 SEATING PLANE C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 --- 0.030 0.050 0.138 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 --- 0.77 1.27 3.51 --- S 1 2 3 A K F L D G 2 PL Z U J H 0.13 (0.005) T DIM A B C D E F G H J K L R S U V Z M STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR CASE 369A-13 ISSUE W B V R 4 C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K R S V INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.175 0.215 0.050 0.090 0.030 0.050 MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.46 1.27 2.28 0.77 1.27 A 1 2 3 S -T- SEATING PLANE K F D G 3 PL M J H 0.13 (0.005) T STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR CASE 369-07 ISSUE K Motorola Bipolar Power Transistor Device Data 7 MJD122 MJD127 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 8 Motorola Bipolar Power Transistor Device Data *MJD122/D* MJD122/D |
Price & Availability of MJD122
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |